The US Transparency Market Research Corporation recently released a research report that the market value of GaN semiconductor devices in 2012 was 379.82 million US dollars, and will reach 22.0373 billion US dollars in 2019. Among them, military defense and aerospace partially account for the highest share of the GaN semiconductor market.
According to the report, the compound annual growth rate from 2013 to 2019 will also reach 24.6%. The United States has the largest share of the global GaN device market, reaching 32.1% in 2012, followed by Europe, Asia and the rest of the world. Asia's rapid growth in the electronics industry will be the fastest growing market for GaN semiconductor devices, with a compound annual growth rate of 27.7% expected in 2013-2019.
Due to the growing demand for high speed, high temperature and high power semiconductor devices, the semiconductor industry is rethinking the design and materials used in semiconductors. With the emergence of a variety of faster, smaller computing devices, silicon materials have struggled to maintain Moore's Law. Due to the unique advantages of GaN materials, such as excellent noise figure, high maximum current, high breakdown voltage, high oscillation frequency, etc., it provides unique options for various applications, such as military, aerospace and defense, automotive, and High-power areas such as industry, solar, power generation and wind power. Gallium nitride has a higher energy efficiency than silicon, so the number of heat sinks required is less than that of silicon. The expansion of application areas and the increase in military demand are the main drivers driving the growth of the GaN semiconductor device market. The increase in demand is primarily due to the significant improvements in device weight and size that GaN devices can bring. In addition, the increase in breakdown voltage of GaN devices is expected to drive the use of GaN in electric vehicles.
In 2012, due to the use of GaN optoelectronic semiconductors in military, aerospace, defense and consumer electronics, optoelectronic semiconductors became the main product type in the global GaN semiconductor device market, accounting for 96.6% of the market. Among them, power semiconductor devices will become the fastest growing devices in the future as the demand for high-power devices in industrial applications grows.
In various applications, the military, defense, and aerospace sectors accounted for the highest share of the GaN semiconductor market, reaching $18.68 million in 2012. Consumer electronics is the second largest application area, followed by information and communication technology (ICT) and automotive applications. With the development of 4G networks, the demand for high power transistors and base stations is expected to increase. Therefore, the demand for GaN power semiconductors in the ICT industry will grow at the fastest rate.
The global photonic integrated circuit market is fragmented and highly competitive. Major industry players include Fujitsu of Japan, Nichia Chemical Industry Co., Ltd., GaN System of Canada, Freescale Semiconductor of the United States, and International Rectifier (IR) , Cree, RF Microsystems, etc.
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GaN is less likely to reduce costs
First, in the GaN part, IMS Research pointed out that the key markets for this product are power supplies, solar inverters, industrial motors, and so on. Furthermore, France's Yole predicts that GaN power devices will reach $10 million in sales in 2012. In early 2012, it will be a turning point for the rapid take-off of the GaN power component market, and the overall market output will reach 50 million in 2013. The dollar scale and quickly surged to $350 million in 2015.
Gallium nitride is a wide bandgap material that offers similar performance advantages as silicon carbide (SiC), but with the potential to reduce costs. The industry believes that the cost of GaN power devices is expected to be as low as silicon MOSFETs, IGBTs and rectifiers in the next few years. In fact, in the past two years, GaN power devices have made significant progress. For example, InternaTIonal RecTIfier has introduced GaNpowIR, EPC introduced eGaNFET devices, and Transphorm has introduced 600 volt GaN transistors.
Among them, International Rectifier's GaNpowIR can meet the increasing demand for power MOSFETs. The company said that GaNpowIR's FOM is ten times better than the most advanced silicon MOSFETs, and it has a huge number of different applications. Potential. Adam White, senior vice president of global rectifier business, said that due to the bottleneck of power chip technology for silicon materials and limited space for future performance breakthroughs, international rectifiers have been investing in GaN material technology research and development many years ago.
It is worth mentioning that in order to make the GaN power components have a better cost structure, both the international rectifier and the EPC are using GaN-on-Silicon process technology, so that not only The cost is better than bulk bulk gallium nitride (Bulk-GaN), and the high electron mobility transistor (HEMT) made of silicon-based gallium nitride is also cheaper than the SiC component of the same grade. In addition to the above, MicroGaN, Furukawa, GaNSystem, Panasonic, Sanken and Toshiba have also joined the field of GaN power semiconductors.
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