Vishay Intertechnology, Inc. (NYSE: VSH) has recently introduced a new P-channel TrenchFET™ power MOSFET, the SiA453EDJ, designed for high-performance and space-sensitive applications. This innovative device operates at -30V with a 12V gate-source voltage (VGS), and it is housed in an ultra-compact PowerPAK® SC-70 package measuring just 2mm x 2mm. The SiA453EDJ stands out for its industry-leading on-resistance values, which significantly enhance energy efficiency and reduce power loss in portable electronics.
The SiA453EDJ features extremely low on-resistance levels of 18.5mΩ at -10V, 23.5mΩ at -4.5V, 26.0mΩ at -3.7V, and 37.7mΩ at -2.5V, making it ideal for use in battery-powered devices where efficiency and compact design are critical. It also includes built-in ESD protection rated up to 4000V, ensuring reliable performance in demanding environments. This makes the SiA453EDJ well-suited for a wide range of applications, including smartphones, tablets, mobile computing devices, non-implantable medical equipment, hard drives, and consumer electronics like electric toothbrushes, razors, scanners, and RFID readers.
Compared to other similar -30V MOSFETs, the SiA453EDJ offers a 36% reduction in on-resistance at 4.5V and a 50% improvement over the closest 12V VGS device. At -2.5V, it delivers a 46% lower on-resistance than the next best 12V VGS solution. These impressive performance metrics allow designers to minimize voltage drops, optimize power usage, and extend battery life in their designs.
In addition to its exceptional electrical performance, the SiA453EDJ is fully Rg and UIS tested, meets JEDEC JS709A halogen-free standards, and complies with the RoHS Directive 2011/65/EU. Its small form factor not only saves valuable PCB space but also supports the trend toward miniaturization in modern electronics. For more details, you can access the official data sheet here: [SiA453EDJ Datasheet](http://datasheet.eepw.com.cn/datasheet/show/id/3121118).
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