Global wafer plant investment situation continues to rise

China's semiconductor market has ushered in a good momentum, and it also attracts the attention of heavyweight equipment and materials manufacturers from various countries. In addition to the SMIC president Zhou Zixue, KLA-Tencor, LamResearch, Intel, Mentor, Amkor and others from the IC design, manufacturing, packaging and testing to equipment and materials suppliers "giant" have a total of Shenghui Shenghui.

According to SEMI's latest report, "World Fab Forecast," China Semiconductor Capital Expenditure investment in 2018-2019 is clearly the most watched in all regions of the world.

Riding on the continuous increase in equipment spending on global fabs from 2018 to 2019, coupled with the procurement and installation of the “long-tail effect” follow-up equipment initiated by local fabs in China, China’s semiconductor equipment spending is expected to surpass South Korea as an expense in 2019. The first area.

2019 Equipment Expenditure with Four Years of Growth

The global fab investment situation is strong. Since the mid-1990s, the industry has not seen a record of three-year growth in equipment spending.

According to the latest update of the SEMI World Fab Forecast Report, fab equipment spending will increase by 5% in 2019, which is also the fourth consecutive year of growth, catching up with the global good momentum and adding to the success of local fabs in China. Capacity, the soaring Chinese spending is expected to surpass South Korea to become the first area of ​​expenditure in 2019.

Samsung's spending slipped off the rise of the Chinese market

SEMI predicts that the global fab equipment spending will be topped by Samsung in 2018 and 2019, but Samsung's investment amount is unlikely to be higher than the 2017 high. Following the record amount of investment in 2017, Korean fab equipment spending will decline by 9% to 18 billion U.S. dollars in 2018, and will drop by 14% to 16 billion U.S. dollars by 2019, but the expenditure for the two years will not exceed The level of 2017.

In comparison, fab equipment spending in China in 2018 will increase by 57% from 2017, and by 60% in 2019. The report pointed out that the Chinese market will be the main driver for the growth of equipment spending for global fabs in 2018 and 2019. Even the report predicts that the amount of equipment spending in China is expected to surpass South Korea by 2019 and become the world’s highest expenditure area.

According to the report, there were 26 wafer fabs in China in 2017 and this number also set a new record. Over the next 2018-2019, with the previously announced fabs entering the equipment-installation phase, the local fab equipment spending in China It will be implemented and continued to increase in the next year.

Although in the past the equipment investment in Chinese local fabs was dominated by foreign investment, the proportion of investment from Chinese domestic fabs will continue to increase in 2019, and the proportion of all related expenditures in China will also increase from 33% in 2017 to 2019. 45%.

Storage and manufacturing expenses will continue to grow

As for the Taiwanese region, where the fab investment is the third largest in the world, wafer equipment spending will decline by 10% in 2018 to about US$10 billion, but it is expected to rebound by 15% in 2019 to more than US$11 billion.

From a product perspective, 3D NAND will continue to be the category with the highest capital expenditures. It will grow by 3% each in 2018 and 2019, and the amounts will reach 16 billion U.S. dollars and 17 billion U.S. dollars respectively. In 2018, DRAM will see a strong growth of 26%. 14 billion U.S. dollars, but in 2019 it will drop 14% to 12 billion U.S. dollars.

In terms of logic ICs, in order to support 7nm process-related investment and increase new production capacity, wafer-generation industrial equipment spending will increase by 2% to $17 billion in 2018. It is estimated that after entering 5nm next year, it will increase by as much as 26% to reach $22 billion. .

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