Cambridge University has introduced a new transistor design that allows wearable devices to use the power of the surrounding transistors as a source of energy and operate at 1 volt and consume less than 1 in 1 watt of electricity.
According to The Register, since 1965, the transistor has developed smoothly according to Moore's Law. Its density is getting denser and the CPU performance is improved. However, the battery has not progressed with the steady development of the transistor.
In this regard, the physicist Fred Schlachter of the Lawrence Berkeley NaTIonal Laboratory in the United States pointed out in 2013 that the battery is not as lawful as the semiconductor industry has Moore's Law.
So the researchers had to try to increase the battery power, but this is not a foolproof method. For example, Samsung Electronics had to recall and discontinue the phone because of the explosion of the Note 7 battery.
However, a few days ago, the University of Cambridge's Sungsik Lee and Arokia Nathan published a transistor design using a very small energy source in the Science Journal. The fabricated transistor can retain the Schottky barrier and make the transistor tight. Independence can still be maintained after packaging.
The researchers point out that the indium gallium zinc oxide (IGZO) thin film transistor is expected to be used in a wide range of devices due to its considerable power savings, such as wearable or implantable electronics that collect the power needed from the surrounding environment. The transistor operates at less than 1 volt and consumes less than 1 billion watts of power, so energy efficiency is outstanding.
The design principle is to use a near-off state current related to the transistor, and the above small electronic components can be manufactured at low temperatures and can be printed on glass, plastic, polyester fiber and paper. And so on all kinds of materials.
In this regard, Nathan believes that researchers have successfully challenged the traditional understanding of the transistor, and found that the characteristics of the Schottky barrier that was previously avoided by engineers can be used in wearable or observation. Ultra-low power applications such as implantable devices in a healthy state.
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